FQU17N08 |
Part Number | FQU17N08 |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• • • • • • 12.9A, 80V, RDS(on) = 0.115Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 28 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD17N08 / FQU17N08 80 12.9 8.2 51.6 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C... |
Document |
FQU17N08 Data Sheet
PDF 595.27KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FQU17N08L |
Fairchild Semiconductor |
80V LOGIC N-Channel MOSFET | |
2 | FQU17P06 |
Fairchild Semiconductor |
60V P-Channel MOSFET | |
3 | FQU10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
4 | FQU10N20 |
INCHANGE |
N-Channel MOSFET | |
5 | FQU10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET |