FQI17N08L |
Part Number | FQI17N08L |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize ... |
Features |
• • • • • • • • 16.5A, 80V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 8.8 nC) Low Crss ( typical 29 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Low level gate drive requirements allowing direct operation from logic drives D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (... |
Document |
FQI17N08L Data Sheet
PDF 571.43KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQI17N08 |
Fairchild Semiconductor |
80V N-Channel MOSFET | |
2 | FQI17P06 |
Fairchild Semiconductor |
60V P-Channel MOSFET | |
3 | FQI17P10 |
Fairchild Semiconductor |
100V P-Channel MOSFET | |
4 | FQI10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
5 | FQI10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET |