Elite Semiconductor Memory Tec fiche technique

No.	Partie #	Fabricant	Description
1	AD82551A	Elite Semiconductor Memory Technology	Stereo Digital Audio Amplifier z 16/18/20/24-bit input with I S data format z PSNR & DR (A-weighting) Loudspeaker: 98dB (PSNR), 102dB (DR) Headphone: 87dB (PSNR), 96dB (DR) z Multiple sampling frequencies (Fs) 8kHz, 12kHz, 16kHz, 22.05kHz, 24kHz 32kHz, 44.1kHz, 48kHz, 64kHz, 88.2k
2	AD82550A	Elite Semiconductor Memory Technology	Stereo Digital Audio Amplifier z 16/18/20/24-bit input with I S data format z PSNR & DR (A-weighting) Loudspeaker: 98dB (PSNR), 106dB (DR) Headphone: 87dB (PSNR), 96dB (DR) z Multiple sampling frequencies (Fs) 8kHz, 12kHz, 16kHz, 22.05kHz, 24kHz 32kHz, 44.1kHz, 48kHz, 64kHz, 88.2k
3	AD8258A	Elite Semiconductor Memory Technology	Stereo/Mono Digital Audio Amplifier z 16/18/20/24-bit input with I S, Left-alignment and Right-alignment data format z PSNR & DR(A-weighting) Loudspeaker: 92dB (PSNR), 89dB (DR) @24V Headphone: 86dB (PSNR), 86dB (DR) www.DataSheet4U.com z Multiple sampling frequencies (Fs) 32kHz / 44.1
4	M13S2561616A	Elite Semiconductor Memory Technology	4M x 16 Bit x 4 Banks Double Data Rate SDRAM z z z z z z z z z z z z z z z z z z z z M13S2561616A 4M x 16 Bit x 4 Banks Double Data Rate SDRAM JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) On-chip DLL Differen
5	AD8256A	Elite Semiconductor Memory Technology	2x16W Stereo Digital Audio Amplifier z 16/18/20/24-bit input with I S, Left-alignment and Right-alignment data format z PSNR & DR(A-weighting) Loudspeaker: 93dB (PSNR), 98dB (DR) Headphone: 86dB (PSNR), 96dB (DR) www.DataSheet4U.com 2 AD8256A 2x16W Stereo Digital Audio Amplifier with
6	M13S128168A	Elite Semiconductor Memory Technology	2M x 16 Bit x 4 Banks Double Data Rate SDRAM z z z z z z z z z z z z z z z z z z z M13S128168A 2M x 16 Bit x 4 Banks Double Data Rate SDRAM JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) On-chip DLL Differentia
7	M13S32321A	Elite Semiconductor Memory Technology	256K x 32 Bit x 4 Banks Double Data Rate SDRAM z z z z z z z z z z z z z z z z z z z M13S32321A 256K x 32 Bit x 4 Banks Double Data Rate SDRAM JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) On-chip DLL Differenti
8	M24L16161DA	Elite Semiconductor Memory Technology	16-Mbit (1M x 16) Pseudo Static RAM • Wide voltage range: 2.2V –3.6V • Access Time: 70 ns • Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active current: 18 mA @ f = fmax • Ultra low standby power • Automatic power-down when deselected • CMOS for optimum sp
9	M24L16161ZA	Elite Semiconductor Memory Technology	16-Mbit (1M x 16) Pseudo Static RAM ‧Wide voltage range: 2.2V –3.6V • Access Time: 70 ns • Ultra-low active power— Typical active current: 3 mA @ f = 1 MHz— Typical active current: 18 mA @ f = fmax • Ultra low standby power • Automatic power-down when deselected • CMOS for optimum speed
10	M24L216128DA	Elite Semiconductor Memory Technology	2-Mbit (128K x 16) Pseudo Static RAM ‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6V • Typical active current: 1 mA @ f = 1 MHz • Low standby power • Automatic power-down when deselected www.DataSheet4U.com M24L216128DA 2-Mbit (128K x 16)
11	M24L216128SA	Elite Semiconductor Memory Technology	2-Mbit (128K x 16) Pseudo Static RAM • Wide voltage range: 2.7V –3.6V • Access Time: 55 ns, 70 ns • Ultra-low active power — Typical active current: 1mA @ f = 1 MHz — Typical active current: 14 mA @ f = fmax (For 55-ns) —Typical active current: 8 mA @ f = fmax (For 70-ns) • Ultra low sta
12	M24L48512SA	Elite Semiconductor Memory Technology	4-Mbit (512K x 8) Pseudo Static RAM • • • • • • Advanced low power architecture High speed: 55 ns, 60 ns and 70 ns Wide voltage range: 2.7V to 3.6V Typical active current: 1mA @ f = 1 MHz Low standby power Automatic power-down when deselected consumption dramatically when deselected.
13	M24L816512DA	Elite Semiconductor Memory Technology	8-Mbit (512K x 16) Pseudo Static RAM ‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6 V • Typical active current: 2 mA @ f = 1 MHz • Typical active current: 11 mA @ f = fMAX • Low standby power • Automatic power-down when deselected www.Data
14	M24L816512SA	Elite Semiconductor Memory Technology	8-Mbit (512K x 16) Pseudo Static RAM ‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6V • Typical active current: 2 mA @ f = 1 MHz • Typical active current: 11 mA @ f = fMAX • Low standby power • Automatic power-down when deselected www.DataS
15	M13S256328A	Elite Semiconductor Memory Technology	2M x 32 Bit x 4 Banks Double Data Rate SDRAM z z z z z z z z z z z z z z z z z z z z z M13S256328A 2M x 32 Bit x 4 Banks Double Data Rate SDRAM JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) On-chip DLL Differe
16	M24L28256DA	Elite Semiconductor Memory Technology	2-Mbit (256K x 8) Pseudo Static RAM •Advanced low-power architecture •High speed: 55 ns, 70 ns •Wide voltage range: 2.7V to 3.3V •Typical active current: 1 mA @ f = 1 MHz •Low standby power •Automatic power-down when deselected www.DataSheet4U.com M24L28256DA 2-Mbit (256K x 8) Pseudo
17	M24L28256SA	Elite Semiconductor Memory Technology	2-Mbit (256K x 8) Pseudo Static RAM •Advanced low-power architecture •High speed: 55 ns, 70 ns •Wide voltage range: 2.7V to 3.6V •Typical active current: 1 mA @ f = 1 MHz •Low standby power •Automatic power-down when deselected www.DataSheet4U.com M24L28256SA 2-Mbit (256K x 8) Pseudo
18	M24L416256DA	Elite Semiconductor Memory Technology	4-Mbit (256K x 16) Pseudo Static RAM • Advanced low-power architecture •High speed: 55 ns, 60 ns and 70 ns •Wide voltage range: 2.7V to 3.6V •Typical active current: 1 mA @ f = 1 MHz •Low standby power •Automatic power-down when deselected www.DataSheet4U.com M24L416256DA 4-Mbit (256K
19	M24L416256SA	Elite Semiconductor Memory Technology	4-Mbit (256K x 16) Pseudo Static RAM • Wide voltage range: 2.7V –3.6V • Access time: 55 ns, 60 ns and 70 ns • Ultra-low active power — Typical active current: 1 mA @ f = 1 MHz — Typical active current: 8 mA @ f = fmax (70-ns speed) • Ultra low standby power • Automatic power-down when de
20	M24L48512DA	Elite Semiconductor Memory Technology	4-Mbit (512K x 8) Pseudo Static RAM • • • • • • Advanced low power architecture High speed: 55 ns, 60 ns and 70 ns Wide voltage range: 2.7V to 3.6V Typical active current: 1mA @ f = 1 MHz Low standby power Automatic power-down when deselected Enable ( WE )inputs LOW and Chip Enable Tw