M13S2561616A |
Part Number | M13S2561616A |
Manufacturer | Elite Semiconductor Memory Technology |
Description | Pin Name Function Address inputs - Row address A0~A12 - Column address A0~A8 A10/AP : AUTO Precharge BA0, BA1 : Bank selects (4 Banks) Data-in/Data-out Row address strobe Column address strobe Write e... |
Features |
z z z z z z z z z z z z z z z z z z z z
M13S2561616A 4M x 16 Bit x 4 Banks Double Data Rate SDRAM
JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) On-chip DLL Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition Quad bank operation CAS Latency : 2; 2.5; 3 Burst Type : Sequential and Interleave Burst Length : 2, 4, 8 All inputs except data & DM are sampled at the rising edge of the system clock(CLK) Data I/O transitions on both edges of data strobe (DQS) DQS is edge-aligne... |
Document |
M13S2561616A Data Sheet
PDF 753.94KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | M13S256328A |
Elite Semiconductor Memory Technology |
2M x 32 Bit x 4 Banks Double Data Rate SDRAM | |
2 | M13S128168A |
Elite Semiconductor Memory Technology |
2M x 16 Bit x 4 Banks Double Data Rate SDRAM | |
3 | M13S128324A |
ESMT |
Double Data Rate SDRAM | |
4 | M13S32321A |
Elite Semiconductor Memory Technology |
256K x 32 Bit x 4 Banks Double Data Rate SDRAM | |
5 | M13S5121632A |
ESMT |
Double Data Rate SDRAM |