| No. | Partie # | Fabricant | Description | Fiche Technique |
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CCSemi |
N-Channel MOSFET ◆ VDS=20V,RDS(ON)=40mΩ@VGS=4.5V,ID=5.0A ◆ VDS=20V,RDS(ON)=60mΩ@VGS=2.5V,ID=4.0A ◆ VDS=20V,RDS(ON)=75mΩ@VGS=1.8V,ID=1.0A Absolute Maximum Ratings Ta=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous* TJ=125℃ -Pulsed Po |
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CCSemi |
P-Channel 60-V(D-S) MOSFET ◆ TrenchFET Power MOSFET ◆ RoHS Compliant Absolute Maximum Ratings Ta=25℃ Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current(TJ=150℃) *1,2 TA=25℃ TA=100℃ VGS ID Pulsed Drain Current IDM Avalanche Current |
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CCSemi |
N-Channel Power MOSFET ◆ Simple Drive Requirement ◆ Small Package Outline ◆ Surface Mount Device Absolute Maximum Ratings Ta=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous TA=25℃ TA=70℃ Pulsed Drain Current * Power Dissipation* Thermal |
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