SI2310 |
Part Number | SI2310 |
Manufacturer | CCSemi |
Description | MOSFET N-Channel Power MOSFET SI2310 Features ◆ Simple Drive Requirement ◆ Small Package Outline ◆ Surface Mount Device Absolute Maximum Ratings Ta=25℃ Parameter Drain-Source Voltage Gate-Source Vol... |
Features |
◆ Simple Drive Requirement ◆ Small Package Outline ◆ Surface Mount Device
Absolute Maximum Ratings Ta=25℃
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous
TA=25℃
TA=70℃ Pulsed Drain Current * Power Dissipation* Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range * 2.Pulse width ≤300us , duty cycle≤ 2%
Symbol VDS VGS ID
IDM PD RthJA Tj.Tstg
Rating 60 ±20 3
2.3 10 1.25 100 -55 to 150
Unit V V
A
W ℃/W
℃
www.canctech.com
Revision 2016/8/15 @2016-2017 CCSemi .
MOSFET
Electrical Characteristics Ta=25℃
Parameter
Symbol
Tes... |
Document |
SI2310 Data Sheet
PDF 572.13KB |
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