SI2310 CCSemi N-Channel Power MOSFET Datasheet, en stock, prix

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SI2310

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SI2310
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Part Number SI2310
Manufacturer CCSemi
Description MOSFET N-Channel Power MOSFET SI2310 Features ◆ Simple Drive Requirement ◆ Small Package Outline ◆ Surface Mount Device Absolute Maximum Ratings Ta=25℃ Parameter Drain-Source Voltage Gate-Source Vol...
Features ◆ Simple Drive Requirement ◆ Small Package Outline ◆ Surface Mount Device Absolute Maximum Ratings Ta=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous TA=25℃ TA=70℃ Pulsed Drain Current * Power Dissipation* Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range * 2.Pulse width ≤300us , duty cycle≤ 2% Symbol VDS VGS ID IDM PD RthJA Tj.Tstg Rating 60 ±20 3 2.3 10 1.25 100 -55 to 150 Unit V V A W ℃/W ℃ www.canctech.com Revision 2016/8/15 @2016-2017 CCSemi . MOSFET Electrical Characteristics Ta=25℃ Parameter Symbol Tes...

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