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Features
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◆ VDS=20V,RDS(ON)=40mΩ@VGS=4.5V,ID=5.0A ◆ VDS=20V,RDS(ON)=60mΩ@VGS=2.5V,ID=4.0A ◆ VDS=20V,RDS(ON)=75mΩ@VGS=1.8V,ID=1.0A
Absolute Maximum Ratings Ta=25℃
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous* TJ=125℃
-Pulsed Power Dissipation* Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range *Surface Mounted on FR4 Board, t≤10sec.
Symbol VDS VGS ID IDM PD RthJA Tj.Tstg
Rating 20 ±10 3.8 15 1.25 100
-55 to 150
Unit V V A A W
℃/W ℃
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MOSFET
Electrical Characteristics Ta=25℃...
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SI2300 Data Sheet
