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SI2309 |
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| Part Number | SI2309 |
| Manufacturer | CCSemi |
| Description | MOSFET P-Channel 60-V(D-S) MOSFET SI2309 Features ◆ TrenchFET Power MOSFET ◆ RoHS Compliant Absolute Maximum Ratings Ta=25℃ Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuo... |
| Features |
◆ TrenchFET Power MOSFET ◆ RoHS Compliant
Absolute Maximum Ratings Ta=25℃
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage Continuous Drain Current(TJ=150℃) *1,2 TA=25℃
TA=100℃
VGS ID
Pulsed Drain Current
IDM
Avalanche Current Power Dissipation*1,2
L = 0.1 mH TA=25℃ TA=70℃
IAS PD
Operating Junction and Storage Temperature Range Tj.Tstg
Maximum Junction-to-Ambient*2
RthJA
Maximum Junction-to-Ambient*3
*1. Pulse Width limited by maximum junction temperature. *2. Surface Mounted on FR4 Board, t≤5sec.
*3. Surface Mounted on FR4 Board.
Rating -60 ±20 -1.25 -0.85 -8 -... |
| Document |
 SI2309 Data Sheet
PDF 324.79KB |
| Distributor | Stock | Price | Buy |
|---|
