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Bruckewell SF1 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
MSF11N70

Bruckewell
N-Channel 700V MOSFET

• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package available Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolu
Datasheet
2
MSF10N80

Bruckewell
800V N-Channel MOSFET

• 100% EAS Test
• Rugged Gate Oxide Technology
• Extremely Low Intrinsic Capacitances
• Remarkable Switching Characteristics
• Unequalled Gate Charge: 10.5 nC (Typ.)
• Extended Safe Operating Area Lower RDS(ON) : 5.5 Ω (Typ.) @VGS=10V
• RoHS complian
Datasheet
3
MSF10N65

Bruckewell
650V N-Channel MOSFET

• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package Application
• Power Factor Correction
• LCD TV Power
• Full and Half Bridge Power Packing & Order Information 50/Tube ; 1,000/Bo
Datasheet
4
MSF10N80A

Bruckewell
800V N-Channel MOSFET
Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 46nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.05 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings (Tc=25
Datasheet
5
SF1020F

Bruckewell
Super Fast Rectifiers

• Low cost.
• Diffusde junction.
• Low forward voltage drop.
• High current capability.
• Easily cleaned with Alcohol,Isopropanol and Similar solvents.
• RoHS compliant package Mechanical Data
• Case: ITO-220AC
• Molding compound meets UL 94 V-0 flam
Datasheet
6
MSF10N60

Bruckewell
600V N-Channel MOSFET

• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package Application
• Power Factor Correction
• LCD TV Power
• Full and Half Bridge Power Packing & Order Information 50/Tube ; 1,000/Bo
Datasheet
7
MSF10N40

Bruckewell
400V N-Channel MOSFET

• Originative New Design
• Very Low Intrinsic Capacitances
• Excellent Switching Characteristics
• 10.5A, 400V, RDS(on) = 0.55Ω @VGS = 10 V
• Extended Safe Operating Area
• Low gate charge (typ 30nC)
• 100% Avalanche Tested
• RoHS compliant package A
Datasheet
8
MSF18N50

Bruckewell
500V N-Channel MOSFET

• Originative New Design
• Very Low Intrinsic Capacitances
• Excellent Switching Characteristics
• 100% EAS Test
• Extended Safe Operating Area
• RoHS compliant package Application
• High current, High speed switching
• PFC (Power Factor Correction)
Datasheet



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