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Advanced Power Electronics |
AP2761I-A rgy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.4 65 Units ℃/W ℃/W Data & speci |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.8 65 Unit ℃/W ℃/W Data & specifications subject to change without notice 1 20071231pre AP2762I-A Electrical Characteristics@Tj=2 |
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Advanced Power Electronics |
AP20T03GH 0.1 -55 to 150 -55 to 150 TO-251(J) Units V V A A A W W/℃ ℃ ℃ Value 10 110 Unit ℃/W ℃/W Data & specifications subject to change without notice 1 200809013 AP20T03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Par |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET to 150 Units V V A A A W W °C °C Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal R |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET e Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit ℃/W Data and specifications subject to change without notice 200407043 AP2301GN Electrical Characteristics@Tj=25oC(unless otherwise specified) |
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Advanced Power Electronics |
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET to 150 A A W ℃ ℃ Data and specifications subject to change without notice 1 201502241 AP2900EC4 Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units V(BR)SSS RSS(ON) VGS(off) |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE ol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit ℃/W Data and specifications subject to change without notice 200407043 AP2301N Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj P |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit ℃/W Data and specifications subject to change without notice 200513041 AP2309N Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Par |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET e Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.4 65 Units |
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Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 110 Unit ℃/W Data and specifications subject to change without notice 200425051-1/7 Datasheet pdf - http://www.Data |
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Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Max. 10 10 8 1.2 50 Units uA uA V V nC nC nC ns ns ns µs pF pF pF ℃/W Collector-Emitter Saturation Voltage Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Tim |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Unit ℃/W Data and specifications subject to change without notice 1 200902044 Free Datasheet http://www.datasheet4u.com/ AP2306GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Brea |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit ℃/W Data and specifications subject to change without notice 201227051-1/4 AP2311GN Electrical Characteristics@Tj=25oC(unless otherwise specified) Sym |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 90 Unit °C/W Ordering Information AP2305GN-HF-3TR : in RoHS-compliant halogen- |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 150 Unit ℃/W 1 201411175AP AP2313GN Electrical Characteristics@Tj=25oC(unless otherw |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE 3 AP2304N Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 25 1 - Typ. 0.1 Max. Units 117 19 |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET er Maximum Thermal Resistance, Junction-ambient 3 Value 90 Unit ℃/W 1 201208152 Data and specifications subject to change without notice Free Datasheet http://www.datasheet4u.com/ AP2329GN-HF Electrical Characteristics@Tj=25oC(unless otherwise s |
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Advanced Power Electronics |
N-channel Enhancement-mode Power MOSFET Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 90 Unit °C/W Ordering Information AP2306GN-HF-3TR RoHS-compliant, halogen-free SOT-23, shipped on tape an |
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Advanced Power Electronics |
N-channel Enhancement-mode Power MOSFET mperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 90 Unit °C/W Ordering Information AP2302AGN-HF-3TR RoHS-compliant halogen-free SOT-23, shipped on tape and |
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