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AP2301N |
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| Part Number | AP2301N |
| Manufacturer | Advanced Power Electronics |
| Description | SOT-23 G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. The SOT-23 package is universally pref... |
| Features |
ol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 90
Unit ℃/W
Data and specifications subject to change without notice
200407043
AP2301N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Test Conditions VGS=0V, ID=-250uA
Min. -20 -0.5 -
Typ. -0.1 4.4 5.2 1.36 0.6 5.2 9.7 19 29 295 170 65
Max. Units 130 190 -1 -10 ±100 10 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
V... |
| Document |
 AP2301N Data Sheet
PDF 103.16KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP2301 |
BCD Semiconductor |
1.5A DDR TERMINATION REGULATOR |
|
| 2 | AP2301 |
Diodes Incorporated |
2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH |
|
| 3 | AP2301A |
Diodes Incorporated |
2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH |
|
| 4 | AP2301AGN |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | AP2301AGN-HF |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|