AP2329GN-HF |
Part Number | AP2329GN-HF |
Manufacturer | Advanced Power Electronics |
Description | Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and costeffectiveness. The SOT-23 package is widely preferred for commercial-indust... |
Features |
er Maximum Thermal Resistance, Junction-ambient
3
Value 90
Unit ℃/W 1 201208152
Data and specifications subject to change without notice
Free Datasheet http://www.datasheet4u.com/
AP2329GN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A
Min. -30 -1 -
Typ. 38.5 60 -1.5 8 5.7 1.5 2.8 6 8 20 12 465 100 90 8
Max. Units 48 85 -3 -10 +100 9.1 740 16 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω
VGS(th) g... |
Document |
AP2329GN-HF Data Sheet
PDF 79.88KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AP2329GN-HF-3 |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | AP2320GN |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | AP2320GN-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | AP2321GN-HF |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | AP2321GN-HF-3 |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |