AP2311GN Advanced Power Electronics P-CHANNEL ENHANCEMENT MODE POWER MOSFET Datasheet, en stock, prix

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AP2311GN

Advanced Power Electronics
AP2311GN
AP2311GN AP2311GN
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Part Number AP2311GN
Manufacturer Advanced Power Electronics
Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all c...
Features Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit ℃/W Data and specifications subject to change without notice 201227051-1/4 AP2311GN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -60 -1 - Typ. -0.04 200 240 2 6 1 3 8 5 22 3 510 50 40 6.4 Max. Units 250 300 -3 -10 -25 ±100 10 810 9.6 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) Sta...

Document Datasheet AP2311GN Data Sheet
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