The μ PA2550 is dual P-channel MOSFETs designed for power management applications of portable equipments, such as load switch. Dual P-channel MOSFETs are assembled in one package, to contribute minimize the equipments. PACKAGE DRAWING (Unit: mm) 2.9±0.1 0.65 8 5 A 0.17±0.05 0 to 0.025 2.8±0.1 2.4±0.1 FEATURES • 1.8 V drive available • Low on-state res.
• 1.8 V drive available
• Low on-state resistance
RDS(on)1 = 40 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A) RDS(on)2 = 60 mΩ MAX. (VGS = −2.5 V, ID = −2.5 A) RDS(on)3 = 93 mΩ MAX. (VGS = −1.8 V, ID = −2.5 A)
• Built-in gate protection diode
• Small and surface mount package (8-pin VSOF (2429))
1 0.32±0.05
4 0.05 M S A
0.8±0.05
S
(0.3)
1: Source1 2: Gate1 3: Source2 4: Gate2 5, 6: Drain2 7, 8: Drain1
ORDERING INFORMATION
PART NUMBER μ PA2550T1H-T1-AT Note μ PA2550T1H-T2-AT Note
LEAD PLATING Pure Sn
PACKING 8 mm embossed taping
3000 p/reel
PACKAGE 8-pin VSOF (2429)
Note Pb-free (This product.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UPA2502 |
NEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
2 | UPA2503 |
NEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
3 | UPA2510 |
NEC |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
4 | UPA2520 |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
5 | UPA2521 |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
6 | uPA2560 |
Renesas |
Dual N-CHANNEL MOSFET | |
7 | uPA2590 |
Renesas |
N- AND P-CHANNEL MOSFET | |
8 | UPA2592T1H |
Renesas |
N- AND P-CHANNEL MOSFET | |
9 | UPA2001C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
10 | UPA2002C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
11 | UPA2003C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
12 | UPA2004C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array |