The µ PA2503, which has a heat spreader, is N-channel applications of notebook computers. 0.65 TYP. PACKAGE DRAWING (Unit: mm) MOS Field Effect Transistor designed for power management FEATURES spreader. The land size is same as 8-pin TSSOP. • Low on-state resistance RDS(on)1 = 9.5 mΩ MAX. (VGS = 10.0 V, ID = 8.0 A) RDS(on)2 = 15.1 mΩ MAX. (VGS = 4.5 V, I.
spreader. The land size is same as 8-pin TSSOP.
• Low on-state resistance RDS(on)1 = 9.5 mΩ MAX. (VGS = 10.0 V, ID = 8.0 A) RDS(on)2 = 15.1 mΩ MAX. (VGS = 4.5 V, ID = 8.0 A)
• Low Ciss: 1200 pF TYP. (VDS = 10.0 V, VGS = 0 V)
+0.05
0.25 −0.05
0.10 M
• µ PA2503 has a thin surface mount package with a heat
+0.1
1 2 3 4
5.8 ±0.1 6.4 ±0.1
8 7 6 5
3.15 ±0.15
3 ±0.1 0.17 ±0.05 0.8 MAX.
0.10 S
ORDERING INFORMATION
PART NUMBER PACKAGE 8PIN HWSON
0 −0
µ PA2503TM
0.75 ±0.15
2.2 ±0.2
1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain
4.15 ±0.2
0.85 ±0.15
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drai.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UPA2502 |
NEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
2 | UPA2510 |
NEC |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
3 | UPA2520 |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
4 | UPA2521 |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
5 | uPA2550 |
Renesas |
DUAL P-CHANNEL MOSFET | |
6 | uPA2560 |
Renesas |
Dual N-CHANNEL MOSFET | |
7 | uPA2590 |
Renesas |
N- AND P-CHANNEL MOSFET | |
8 | UPA2592T1H |
Renesas |
N- AND P-CHANNEL MOSFET | |
9 | UPA2001C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
10 | UPA2002C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
11 | UPA2003C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
12 | UPA2004C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array |