UPA2521 - Renesas

UPA2521 MOS FIELD EFFECT TRANSISTOR

The μ PA2521 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipments. PACKAGE DRAWING (Unit: mm) 2.9±0.1 0.65 8 5 A 0.17±0.05 FEATURES • Low on-state resistance RDS(on)1 = 16.5 mΩ MAX. (VGS = 10 V, ID = 8.0 A) RDS(on)2 = 25 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) • Built-in gate protectio.

Features

• Low on-state resistance RDS(on)1 = 16.5 mΩ MAX. (VGS = 10 V, ID = 8.0 A) RDS(on)2 = 25 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
• Built-in gate protection diode
• Small and surface mount package (8-pin VSOF (2429))
• Pb-free (This product does not contain Pb in external electrode and other parts.) 0 to 0.025 2.8±0.1 2.4±0.1 1 0.32±0.05 4 0.05 M S A (0.3) 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 0.8±0.05 S ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (D.