The µ PA2502, which has a heat spreader, is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computers. 0.65 TYP. PACKAGE DRAWING (Unit: mm) • µ PA2502 has a thin surface mount package with a heat spreader. The land size is same as 8-pin TSSOP. • Low on-state resistance RDS(on)1 = 12.0 mΩ MAX..
1 2 3 4
+0.1
8 7 6 5
5.8 ±0.1 6.4 ±0.1
0.17 ±0.05 0.8 MAX.
3.15 ±0.15
3 ±0.1
0.10 S
ORDERING INFORMATION
PART NUMBER PACKAGE 8PIN HWSON
0.75 ±0.15 4.15 ±0.2 0.85 ±0.15
2.2 ±0.2
0 −0
+0.05
• Low Ciss: 760 pF TYP. (VDS = 10.0 V, VGS = 0 V)
1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain
µ PA2502TM
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC)
Note1 Note2 Note1
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
30.0 ±20.0 ±13.0 ±52.0 2.7 150 −55 to +150 13.0 16.9
V V A A W °C °C A mJ
Gate Protection Diode Source Gate
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UPA2503 |
NEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
2 | UPA2510 |
NEC |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
3 | UPA2520 |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
4 | UPA2521 |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
5 | uPA2550 |
Renesas |
DUAL P-CHANNEL MOSFET | |
6 | uPA2560 |
Renesas |
Dual N-CHANNEL MOSFET | |
7 | uPA2590 |
Renesas |
N- AND P-CHANNEL MOSFET | |
8 | UPA2592T1H |
Renesas |
N- AND P-CHANNEL MOSFET | |
9 | UPA2001C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
10 | UPA2002C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
11 | UPA2003C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
12 | UPA2004C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array |