N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 350 Volt VDS RDS(on)=35Ω ZVN2535A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V.
* 350 Volt VDS RDS(on)=35Ω
ZVN2535A
D G
S
E-Line TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 350 90 1 ± 20 700 -55 to +150 UNIT V mA A V mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ZVN2535A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
2 | ZVN2106 |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
3 | ZVN2106 |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
4 | ZVN2106A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
5 | ZVN2106A |
Diodes |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
6 | ZVN2106B |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE MOSFET | |
7 | ZVN2106G |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
8 | ZVN2106G |
Diodes |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
9 | ZVN2110A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
10 | ZVN2110C |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
11 | ZVN2110G |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
12 | ZVN2120A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |