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The XP151A12A2MR is a N-Channel Power MOS FET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. Features Low on-.
Low on-state resistance : Rds (on) = 0.1 Ω ( Vgs = 4.5V ) Rds (on) = 0.16 Ω ( Vgs = 2.5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : 2.5V High density mounting : SOT - 23 Pin Configuration Pin Assignment D 3 u PIN NUMBER 1 2 3 PIN NAME G S D FUNCTION Gate Source Drain 1 G 2 S SOT - 23 Top View Equivalent Circuit 3 Absolute Maximum Ratings Ta=25 OC PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS 20 + 12 1 4 1 0.5 1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | XP151A12A2MR-G |
TOREX |
Power MOSFET |
|
| 2 | XP151A11B0MR |
Torex Semiconductor |
POWER MOS FET |
|
| 3 | XP151A11B0MR-G |
Torex Semiconductor |
Power MOSFET |
|
| 4 | XP151A13A0MR |
Tuofeng Semiconductor |
Power MOS FET |
|
| 5 | XP151A13A0MR-G |
Torex Semiconductor |
Power MOSFET |
|
| 6 | XP1501 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor |
|
| 7 | XP1504 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor |
|
| 8 | XP1504 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 9 | XP1507 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor |
|
| 10 | XP152A01D8MR |
Torex Semiconductor |
Power MOS FET |
|
| 11 | XP152A11E5MR-G |
Torex Semiconductor |
Power MOSFET |
|
| 12 | XP152A12C0MR |
Torex Semiconductor |
POWER MOS FET |
|