The XP152A11E5MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. ■APPLICATIONS ●.
Low On-State Resistance : Rds(on) = 0.25Ω@ Vgs = -10V
: Rds(on) = 0.45Ω@ Vgs = -4.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: -4.5V
P-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-23
Environmentally Friendly : EU RoHS Compliant, Pb Free
■PIN CONFIGURATION/ MARKING
21 1 x
G:Gate S:Source D:Drain
■PRODUCT NAMES
PRODUCTS
PACKAGE ORDER UNIT
XP152A11E5MR
SOT-23
3,000/Reel
XP152A11E5MR-G(
*)
SOT-23
3,000/Reel
(
*) The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant.
* x represents production lot numb.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | XP152A12C0MR |
Torex Semiconductor |
POWER MOS FET | |
2 | XP152A12C0MR |
Tuofeng Semiconductor |
Power MOS FET | |
3 | XP152A12C0MR-G |
Torex Semiconductor |
POWER MOS FET | |
4 | XP152A12COMR |
Torex Semiconductor |
Power MOS FET | |
5 | XP152A12COMR |
JinYu |
20V P-Channel Enhancement Mode MOSFET | |
6 | XP152A01D8MR |
Torex Semiconductor |
Power MOS FET | |
7 | XP1501 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor | |
8 | XP1504 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor | |
9 | XP1504 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
10 | XP1507 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor | |
11 | XP151A11B0MR |
Torex Semiconductor |
POWER MOS FET | |
12 | XP151A11B0MR-G |
Torex Semiconductor |
Power MOSFET |