Composite Transistors XP1504 Silicon NPN epitaxial planer transistor Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.2±0.05 0.12 – 0.02 +0.05 For amplification of low frequency output 0.65 s q q Features Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 1 2 3 5 0.65.
Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half.
2.0±0.1
1 2 3
5
0.65
4
0.9± 0.1
q
2SD1938 × 2 elements
0.7±0.1
s Basic Part Number of Element
0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg
(Ta=25˚C)
Ratings 50 20 25 300 500 150 150
–55 to +150 Unit V V V .
Composite Transistors XP01504 (XP1504) Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequ.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | XP1501 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor | |
2 | XP1507 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor | |
3 | XP151A11B0MR |
Torex Semiconductor |
POWER MOS FET | |
4 | XP151A11B0MR-G |
Torex Semiconductor |
Power MOSFET | |
5 | XP151A12A2MR |
TOREX |
Power MOS FET | |
6 | XP151A12A2MR-G |
TOREX |
Power MOSFET | |
7 | XP151A13A0MR |
Tuofeng Semiconductor |
Power MOS FET | |
8 | XP151A13A0MR-G |
Torex Semiconductor |
Power MOSFET | |
9 | XP152A01D8MR |
Torex Semiconductor |
Power MOS FET | |
10 | XP152A11E5MR-G |
Torex Semiconductor |
Power MOSFET | |
11 | XP152A12C0MR |
Torex Semiconductor |
POWER MOS FET | |
12 | XP152A12C0MR |
Tuofeng Semiconductor |
Power MOS FET |