XP151A11B0MR - Torex Semiconductor

XP151A11B0MR POWER MOS FET

NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.17Ω (max) NUltra High-Speed Switching NGate Protect Diode Built-in NSOT-23 Package GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems The XP151A11B0MR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching charact.

Features

Tch Tstg 150 -55 ~ 150 SYMBOL Vdss Vgss Id Idp Idr Pd RATINGS 30 + 20 1 4 1 0.5 Ta=25 OC UNITS V V A A A W O C C O ( note ) : When implemented on a ceramic PCB 802 DC Characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. SYMBOL Idss Igss Vgs (off ) Rds ( on ) | Yfs | Vf CONDITIONS Vds = 30V , Vgs = 0V Vgs = ± 20V , Vds = 0V Id = 1mA , Vds = 10V Id = 0.5A , Vgs = 10V Id = 0.5A , Vgs = 4.5V.