XN421N - Panasonic Semiconductor

XN421N Silicon NPN epitaxial planer transistor

Composite Transistors XN421N Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 0.65±0.15 2.8 –0.3 +0.2 +0.25 1.5 –0.05 6 0.65±0.15 1 0.3 –0.05 0.5 –0.05 2.9 –0.05 1.9±0.1 +0.2 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one.

Features

+0.1 +0.1 1 Composite Transistors PT — Ta 500 XN421N Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE 160 Ta=25˚C 140 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA VCE(sat) — IC 10 hFE — IC IC/IB=10 480 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 400 Ta=75˚C Collector current IC (mA) 120 100 80 60 40 1 320 25˚C 240 0.1 25˚C Ta=75˚C 160
  –25˚C 0.1mA 20 0 0 2 4 6 8 10 12 80
  –25˚C 0.01 1 10 100 1000 0 1 10 100 1000 Collector to emitter voltage VCE (V).