XN4112 - Panasonic Semiconductor

XN4112 Silicon PNP epitaxial planer transistor

Composite Transistors XN4112 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 0.65±0.15 6 0.95 2.8 –0.3 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 2.9 –0.05 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2.

Features

0.5
  –0.05 +0.1 +0.1 1 Composite Transistors PT — Ta 500 XN4112 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE
  –160
  –140 Ta=25˚C IB=
  –1.0mA
  –0.9mA
  –0.8mA
  –0.7mA
  –0.6mA
  –0.5mA
  –80
  –60
  –40
  –20 0 0
  –2
  –4
  –6
  –8
  –10
  –12
  –0.4mA
  –0.3mA
  –0.2mA
  –0.1mA VCE(sat) — IC
  –100 hFE — IC IC/IB=10 400 VCE=
  –10V Collector to emitter saturation voltage VCE(sat) (V)
  –30
  –10
  –3
  –1
  –0.3
  –0.1
  –25˚C
  –0.03
  –0.01
  –0.1
  –0.3 Forward current transfer ratio hFE Collector current IC (mA)
  –120
  –100 300 Ta=75˚C 200 25˚C
  –25˚C 100 25˚C Ta=75˚C
  –1
  –3.