XN421L - Panasonic Semiconductor

XN421L Silicon NPN epitaxial planer transistor

Composite Transistors XN421L Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 0.65±0.15 6 2.8 –0.3 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 0.95 2.9 –0.05 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0..

Features

0.5
  –0.05 +0.1 +0.1 1 Composite Transistors PT — Ta 500 XN421L Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE 240 VCE(sat) — IC 100 hFE — IC IC/IB=10 240 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C 200 Forward current transfer ratio hFE 200 Collector current IC (mA) 10 160 IB=1.0mA 120 0.8mA 0.6mA 80 0.4mA 160 Ta=75˚C 1 120 25˚C Ta=75˚C 25˚C 0.1
  –25˚C
  –25˚C 80 40 0.2mA 0 0 2 4 6 8 10 12 40 0.01 1 3 10 30 100 300 1000 0 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) .