XN4210 - Panasonic Semiconductor

XN4210 Silicon NPN epitaxial planer transistor

Composite Transistors XN4210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 0.65±0.15 6 0.95 2.8 –0.3 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 2.9 –0.05 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2.

Features

0.5
  –0.05 +0.1 +0.1 1 Composite Transistors PT — Ta 500 XN4210 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE 60 VCE(sat) — IC 100 hFE — IC IC/IB=10 400 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) 50 30 10 3 1 Ta=75˚C 0.3 25˚C 0.1 0.03 0.01 0.1
  –25˚C Forward current transfer ratio hFE IB=1.0mA 0.9mA 0.8mA Ta=25˚C 350 300 Ta=75˚C 250 25˚C 200 150 100 50 0
  –25˚C Collector current IC (mA) 40 0.4mA 0.5mA 0.6mA 0.7mA 0.1mA 30 0.3mA 20 10 0 0 2 4 6 8 10 12 0.3 1 3 10 30 100 1 3 10 30 100.