WTC2306 - Weitron Technology

WTC2306 Enhancement Mode Power MOSFET

WTC2306 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 5.8 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 2 SOURCE Features: * Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V * Rugged and Reliable * Simple Drive Requirement * SOT-23 Package 3 1 2 Applications: * Power Management in Notebook Compute.

Features

* Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V
* Rugged and Reliable
* Simple Drive Requirement
* SOT-23 Package 3 1 2 Applications:
* Power Management in Notebook Computer
* Portable Equipment
* Battery Powered System SOT-23 Maximum Ratings (TA Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation (TA=25°C) Maximum Junction-Ambient2 Operating Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD RθJA TJ Tstg Value 30 ±12 5.8 30 1.4 140 -55~+150 -55~+150 Unit V V A A W °C/W .