WTC2308 - Weitron Technology

WTC2308 Enhancement Mode Power MOSFET

WTC2308 N-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT 3 AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE www.DataSheet4U.com Features: SOURCE 2 3 1 2 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <160 mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source .

Features

SOURCE 2 3 1 2
*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <160 mΩ@V GS =10V
*Rugged and Reliable
*Simple Drive Requirement
*SOT-23 Package SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Unless Otherwise Specified) Symbol VDS VGS Value 60 ±20 3.0 2.3 10 1.38 90 -55~+150 Unit V ,(T A ,(T A ID IDM PD R JA A Pulsed Drain Current 1,2 Total Power Dissipation(T A =25˚C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and Storage Temperature Range W ℃/W ℃ TJ, Tstg Device Marking WTC2308=2308 htt.