WTC2305 - Weitron Technology

WTC2305 P-Channel Enhancement Mode Power MOSFET

WTC2305 P-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE Features: *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <70m Ω @V GS =10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOURCE 2 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable.

Features

*Super High Dense Cell Design For Low R DS(ON) R DS(ON) <70m Ω @V GS =10V
*Rugged and Reliable
*Simple Drive Requirement
*SOT-23 Package SOURCE 2 3 1 2 SOT-23 Applications
*Power Management in Notebook Computer
*Portable Equipment
*Battery Powered System Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,(T A Unless Otherwise Specified) Symbol VDS VGS ID I DM PD R θJA TJ , Tstg Value -30 ±12 -4.2 -30 1.4 140 -55~+150 Unit V A Pulsed Drain Current 1,2 Total Power Dissipation(T A =25˚C) Maximum Thermal Resistance Junction-ambient 3 ww.