WNMD2178 - WillSEMI

WNMD2178 MOSFET

The WNMD2178 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected. Uses advanced trench technology and design to provide excellent RSS(ON) with low gate charge. This device is designed for Lithium-Ion battery protec.

Features

 Trench Technology
 Supper high density cell design
 Excellent ON resistance for higher DC current
 Extremely Low Threshold Voltage
 Small package DFN2X2-4L 34 2 1 Bottom View DFN2X2-4L 43 S2 G2 2178 NDYW S1 G1 12 4: Source 2 3: Gate 2 1: Source 1 2: Gate 1 2178 = Device Code N D =Special Code.