WNMD2172 - Will Semiconductor

WNMD2172 Dual N-Channel MOSFET

Rds(on) (Ω) 0.015@ VGS=4.5V 0.0155@ VGS=4.0V 0.017@ VGS=3.1V 0.018@ VGS=2.5V 0.021@ VGS=1.8V The WNMD2172 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard .

Features

WNMD2172 Http//:www.sh-willsemi.com TSSOP-8L D1/D2 S2 S2 G2 8 76 5 12 34 D1/D2 S1 S1 G1 Pin configuration (Top view) 87 65
 Trench Technology
 Supper high density cell design
 Excellent ON resistance for higher DC current
 Extremely Low Threshold Voltage
 Small package TSSOP-8L Applications
 Driver for Relay, Solenoid, Motor, LED etc.
 DC-DC converter circuit
 Power Switch
 Load Switch
 Charging WLS I 2 1 72 WDYW 12 3 4 WLSI 2172 WD = Willsemi = Device Co.