WNMD2173 - Will Semiconductor

WNMD2173 Dual N-Channel MOSFET

The WNMD2173 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected. Uses advanced trench technology and design to provide excellent RSS(ON) with low gate charge. This device is designed for Lithium-Ion battery protec.

Features

 Trench Technology
 Supper high density cell design
 Excellent ON resistance for higher DC current
 Extremely Low Threshold Voltage
 Small package CSP 4L MOSFET1 Gate 1 MOSFET2 Gate 2 Gate Protection Diode Source 1 Body Diode CSP 4L Source 2 43 73 YW 12 1: Source 1 2: Gate 1 3: Gate 2 4: S.