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WFU4N65S |
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| Part Number | WFU4N65S |
| Manufacturer | Winsemi |
| Description | 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg =13nC) � 100% UIS tested � RoHS compliant General Description Power MOSFET is fabricated using advanced su... |
| Features |
� Ultra low Rdson � Ultra low gate charge (typ. Qg =13nC) � 100% UIS tested � RoHS compliant
General Description
Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
Absolute Maximum Ratings
Symbol
VDSS
Drain Source Voltage
Continuous Drain Current (Tc=25℃) ID
(Tc=100℃)
Parameter
I DM
Drain Current Pulsed 1)
VGS
Gate to Source Voltage
EAS
Single Pulse Avalanche Energy 2)
I AR
Single Pulse Avalanche C... |
| Document |
 WFU4N65S Data Sheet
PDF 147.90KB |
| Distributor | Stock | Price | Buy |
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