The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. INTERNAL SCHEMATIC DIAGRAM n APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT ORDERING INFORMA.
220FP TO-247 PACKAGING TUBE TUBE TUBE June 2003 1/11 http://www.Datasheet4U.com STP20NM60FD - STF20NM60D - STW20NM60FD ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) VISO Tj Tstg Parameter STP20NM60FD Value STF20NM60D STW20NM60FD Unit V V V 20 12.6 80 214 1.42 A A A W W/°C V/ns V °C °C Drain-source Voltage (VGS =0 ) Drain-gate Voltage (RGS =2 0 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulatio.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | W20NM60 |
ST Microelectronics |
N-Channel Power MOSFET | |
2 | W20NM50 |
STMicroelectronics |
STW20NM50 | |
3 | W20NM50FD |
STMicroelectronics |
STW20NM50FD | |
4 | W20NB50 |
STMicroelectronics |
STW20NB50 | |
5 | W20NC50 |
STMicroelectronics |
STW20NC50 | |
6 | W20NK50Z |
STMicroelectronics |
N-Channel Power MOSFET | |
7 | W2010 |
TT electronics |
Precision Thin Film Chip Resistors | |
8 | W2020NC360 |
IXYS |
Rectifier Diode | |
9 | W2020NC380 |
IXYS |
Rectifier Diode | |
10 | W2020NC400 |
IXYS |
Rectifier Diode | |
11 | W2020NC420 |
IXYS |
Rectifier Diode | |
12 | W2020NC440 |
IXYS |
Rectifier Diode |