The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITH MODE LOW POWER SUPPLIES (SMPS) s HIGH CURR.
in Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 18.4 11.6 73.6 220 1.75 2
–65 to 150 150
(1)ISD ≤18.4A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.
Unit V V V A A A W W/°C V/ns °C °C
(
•)Pulse width limited by safe operating area
May 2001
1/8
STW20NC50
THERMAL DATA
Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Tempera.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | W20NB50 |
STMicroelectronics |
STW20NB50 | |
2 | W20NK50Z |
STMicroelectronics |
N-Channel Power MOSFET | |
3 | W20NM50 |
STMicroelectronics |
STW20NM50 | |
4 | W20NM50FD |
STMicroelectronics |
STW20NM50FD | |
5 | W20NM60 |
ST Microelectronics |
N-Channel Power MOSFET | |
6 | W20NM60FD |
ST Microelectronics |
N-CHANNEL MOSFET | |
7 | W2010 |
TT electronics |
Precision Thin Film Chip Resistors | |
8 | W2020NC360 |
IXYS |
Rectifier Diode | |
9 | W2020NC380 |
IXYS |
Rectifier Diode | |
10 | W2020NC400 |
IXYS |
Rectifier Diode | |
11 | W2020NC420 |
IXYS |
Rectifier Diode | |
12 | W2020NC440 |
IXYS |
Rectifier Diode |