The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic per.
Type
STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60
VDSS
600V 600V 600V 600V 600V
RDS(on)
< 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω
ID
20A 20A 20A 20A 20A
■ High dv/dt and avalanche capabilities
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent av.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | W20NM60FD |
ST Microelectronics |
N-CHANNEL MOSFET | |
2 | W20NM50 |
STMicroelectronics |
STW20NM50 | |
3 | W20NM50FD |
STMicroelectronics |
STW20NM50FD | |
4 | W20NB50 |
STMicroelectronics |
STW20NB50 | |
5 | W20NC50 |
STMicroelectronics |
STW20NC50 | |
6 | W20NK50Z |
STMicroelectronics |
N-Channel Power MOSFET | |
7 | W2010 |
TT electronics |
Precision Thin Film Chip Resistors | |
8 | W2020NC360 |
IXYS |
Rectifier Diode | |
9 | W2020NC380 |
IXYS |
Rectifier Diode | |
10 | W2020NC400 |
IXYS |
Rectifier Diode | |
11 | W2020NC420 |
IXYS |
Rectifier Diode | |
12 | W2020NC440 |
IXYS |
Rectifier Diode |