W20NM50 - STMicroelectronics

W20NM50 STW20NM50

le The MDmesh™ is a new revolutionary MOSFET o technology that associates the Multiple Drain pros cess with the Company’s PowerMESH™ horizontal b layout. The resulting product has an outstanding low O on-resistance, impressively high dv/dt and excellent - avalanche characteristics. The adoption of the ) Company’s proprietary strip technique yields overall t(.

Features

TO-247 INTERNAL SCHEMATIC DIAGRAM Obsolete ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VGS Gate- source Voltage ±30 V ID Drain Current (continuous) at TC = 25°C 20 A ID Drain Current (continuous) at TC = 100°C 12.6 A IDM ( ) Drain Current (pulsed) 80 A PTOT Total Dissipation at TC = 25°C 214 W Derating Factor 1.44 W/°C dv/dt (1) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max. Operating Junction Temperature (
•)Pulse width limited by safe operating area (1) ISD ≤20A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. February 2004 15
  –65 t.