CASE 26 T-1¾ (5 mm) CHIP SIZE: .018" x .018" This narrow beam angle 5 mm diameter plastic packaged emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications. ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power .
AL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110) Output Irradiance Part Number Ee mW/cm2 Min. VTE1261 VTE1262 3.0 4.0 Typ. 3.9 5.2 Condition distance mm 36 36 Diameter mm 6.4 6.4 Radiant Intensity Ie mW/sr Min. 39 52 Total Power PO mW Typ. 20 25 Test Current IFT mA (Pulsed) 100 100 Forward Drop VF @ IFT Volts Typ. Typ. 1.5 1.5 Max. 2.0 2.0 ±10° ±10° Half Power Beam Angle θ1/2 Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 113 GaAlAs Infrared Emi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VTE1261 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes | |
2 | VTE1281-1 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes | |
3 | VTE1281-2 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes | |
4 | VTE1281F |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes | |
5 | VTE1281W-1 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes | |
6 | VTE1281W-2 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes | |
7 | VTE1285 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes | |
8 | VTE1291-1 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes | |
9 | VTE1291-2 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes | |
10 | VTE1291W-1 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes | |
11 | VTE1291W-2 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes | |
12 | VTE1295 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes |