VTE1281W-2 - PerkinElmer Optoelectronics

VTE1281W-2 GaAlAs Infrared Emitting Diodes

CASE 26W T-1¾ (5 mm) WIDE ANGLE CHIP SIZE: .015" x .015" This wide beam angle 5 mm diameter plastic packaged emitter contains a GaAlAs, 880 nm IRED chip. It is a cost effective design and is well suited for high current pulse applications. ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power.

Features

TICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110) Output Irradiance Part Number Ee mW/cm2 Min. VTE1281W-1 VTE1281W-2 1.2 2.5 Typ. 1.6 3.3 Condition distance mm 36 36 Diameter mm 6.4 6.4 Radiant Intensity Ie mW/sr Min. 16 32 Total Power PO mW Typ. 20 25 Test Current IFT mA (Pulsed) 100 100 Forward Drop VF @ IFT Volts Typ. Typ. 1.5 1.5 Max. 2.0 2.0 ±25° ±25° Half Power Beam Angle θ1/2 Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 116 .