CASE 26F T-1¾ (5 mm) FLAT CHIP SIZE: .015" x .015" This 5 mm diameter plastic packaged emitter has no lens. It is designed to be coupled to plastic fibers or used to illuminate an external lens. It contains a medium area, single wirebonded, GaAlAs 880 nm chip and is designed to be cost effective in moderate pulse drive applications. ABSOLUTE MAXIMUM RATIN.
ng Temperature: (1.6 mm from case, 5 seconds max.) 5.0V 10 µA 880 nm 23 pF 260°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110) Output Irradiance Part Number Ee mW/cm2 Min. VTE1281F 0.16 Typ. 0.21 Condition distance mm 36 Diameter mm 6.4 Radiant Intensity Ie mW/sr Min. 2.1 Total Power PO mW Typ. 20 Test Current IFT mA (Pulsed) 100 Forward Drop VF @ IFT Volts Typ. Typ. 1.5 Max. 2.0 ±45° Half Power Beam Angle θ1/2 Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 W.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VTE1281-1 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes | |
2 | VTE1281-2 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes | |
3 | VTE1281W-1 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes | |
4 | VTE1281W-2 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes | |
5 | VTE1285 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes | |
6 | VTE1261 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes | |
7 | VTE1262 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes | |
8 | VTE1291-1 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes | |
9 | VTE1291-2 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes | |
10 | VTE1291W-1 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes | |
11 | VTE1291W-2 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes | |
12 | VTE1295 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes |