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VTE1262 |
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| Part Number | VTE1262 |
| Manufacturer | PerkinElmer Optoelectronics |
| Description | CASE 26 T-1¾ (5 mm) CHIP SIZE: .018" x .018" This narrow beam angle 5 mm diameter plastic packaged emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitabl... |
| Features |
AL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110)
Output Irradiance Part Number Ee mW/cm2 Min. VTE1261 VTE1262 3.0 4.0 Typ. 3.9 5.2 Condition distance mm 36 36 Diameter mm 6.4 6.4 Radiant Intensity Ie mW/sr Min. 39 52 Total Power PO mW Typ. 20 25 Test Current IFT mA (Pulsed) 100 100 Forward Drop VF @ IFT Volts Typ. Typ. 1.5 1.5 Max. 2.0 2.0 ±10° ±10° Half Power Beam Angle θ1/2
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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GaAlAs Infrared Emi... |
| Document |
 VTE1262 Data Sheet
PDF 40.52KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | VTE1261 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes |
|
| 2 | VTE1281-1 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes |
|
| 3 | VTE1281-2 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes |
|
| 4 | VTE1281F |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes |
|
| 5 | VTE1281W-1 |
PerkinElmer Optoelectronics |
GaAlAs Infrared Emitting Diodes |
|