VTE1163 - PerkinElmer Optoelectronics

VTE1163 GaAlAs Infrared Emitting Diodes

CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" x .018" This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications. ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Diss.

Features

25°C (See also GaAlAs curves, pages 108-110) Output Irradiance Part Number Ee mW/cm2 Min. VTE1163 22 Typ. 28 Condition distance mm 36 Diameter mm 6.4 Radiant Intensity Ie mW/sr Min. 285 Total Power PO mW Typ. 110 Test Current IFT mA (Pulsed) 1.0 Forward Drop VF @ IFT Volts Typ. Typ. 2.8 Max. 3.5 ±10° Half Power Beam Angle θ1/2 Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 112 .