Features N-Channel,5V Logic Level Control Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Ⅱ Technology 100% Avalanche test Pb-free lead plating; RoHS compliant VSP008N10MSC 100V/85A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 100 V 6 mΩ 7.5 mΩ 85 A PDFN5x6 Part ID VSP008N10MSC .
N-Channel,5V Logic Level Control
Enhancement mode
Low on-resistance RDS(on) @ VGS=4.5 V
VitoMOS® Ⅱ Technology
100% Avalanche test
Pb-free lead plating; RoHS compliant
VSP008N10MSC
100V/85A N-Channel Advanced Power MOSFET
V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID
100 V
6 mΩ
7.5 mΩ
85
A
PDFN5x6
Part ID VSP008N10MSC
Package Type PDFN5x6
Marking 008N10MC
Tape and reel information
3000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage Gate-Source voltage
IS
Diode continuous forw.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VSP008N10MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
2 | VSP008C03MD |
Vanguard Semiconductor |
N+P-Channel Advanced Power MOSFET | |
3 | VSP002N06HS-G |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
4 | VSP002N06MS-G |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
5 | VSP002P02KS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
6 | VSP003N04MS-G |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
7 | VSP003N06HS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
8 | VSP003N06MS-G |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
9 | VSP003N10HS-G |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
10 | VSP004N03LS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
11 | VSP004P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
12 | VSP005N03MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |