Features N+P Channel Enhancement mode Very low on-resistance Fast Switching Pb-free lead plating; RoHS compliant VSP008C03MD 30V N+P Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=±10 V R @DS(on),TYP VGS=±4.5V ID 30 -30 V 6.5 13 mΩ 10 24 mΩ 45 -35 A PDFN5x6 Part ID VSP008C03MD Package Type PDFN5x6 Marking 008C03MD Tape and reel informa.
N+P Channel
Enhancement mode
Very low on-resistance
Fast Switching
Pb-free lead plating; RoHS compliant
VSP008C03MD
30V N+P Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=±10 V R @DS(on),TYP VGS=±4.5V ID
30 -30 V 6.5 13 mΩ 10 24 mΩ 45 -35 A
PDFN5x6
Part ID VSP008C03MD
Package Type PDFN5x6
Marking 008C03MD
Tape and reel information
3000pcs/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
Rating NMOS PMOS
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=±10V
IDM EAS
Pulse drai.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VSP008N10MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
2 | VSP008N10MSC |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
3 | VSP002N06HS-G |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
4 | VSP002N06MS-G |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
5 | VSP002P02KS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
6 | VSP003N04MS-G |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
7 | VSP003N06HS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
8 | VSP003N06MS-G |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
9 | VSP003N10HS-G |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
10 | VSP004N03LS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
11 | VSP004P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
12 | VSP005N03MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |