VSP008N10MS - Vanguard Semiconductor

VSP008N10MS N-Channel Advanced Power MOSFET

Features  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  100% Avalanche test  Pb-free lead plating; RoHS compliant VSP008N10MS 100V/85A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 100 V 6 mΩ 10 mΩ 85 A PDFN5x6 Part ID VSP008N10MS Package .

Features

 N-Channel，5V Logic Level Control
 Enhancement mode
 Low on-resistance RDS(on) @ VGS=4.5 V
 VitoMOS® Ⅱ Technology
 100% Avalanche test
 Pb-free lead plating; RoHS compliant VSP008N10MS 100V/85A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 100 V 6 mΩ 10 mΩ 85 A PDFN5x6 Part ID VSP008N10MS Package Type PDFN5x6 Marking 008N10M Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS ID IDM IDSM EAS Diode continuou.