Features N-Channel Enhancement mode low on-resistance @ VGS=4.5 V Fast Switching Pb-free lead plating; RoHS compliant VSO140N15MS 150V/6A N-Channel Advanced Power MOSFET V DS R DS(on),typ@VGS=10V R DS(on),typ@VGS=4.5V ID 150 125 115 6 SOP8 V mΩ mΩ A Part ID Package Type VSO140N15MS SOP8 Marking 140N15M Tape and reel information 3000pcs/re.
N-Channel
Enhancement mode
low on-resistance @ VGS=4.5 V
Fast Switching
Pb-free lead plating; RoHS compliant
VSO140N15MS
150V/6A N-Channel Advanced Power MOSFET
V DS R DS(on),typ@VGS=10V R DS(on),typ@VGS=4.5V ID
150 125 115
6
SOP8
V mΩ mΩ A
Part ID
Package Type
VSO140N15MS
SOP8
Marking 140N15M
Tape and reel information
3000pcs/reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage Gate-Source voltage
ID
IDM PD IS MSL
Continuous drain current@VGS=10V
Pulse drain current tested ① Maximum power dissipa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VSO100M06MD |
Vanguard Semiconductor |
N+P-Channel Advanced Power MOSFET | |
2 | VSO100N10MD |
Vanguard Semiconductor |
Dual N-Channel Advanced Power MOSFET | |
3 | VSO100N10MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
4 | VSO100P06MD |
Vanguard Semiconductor |
Dual P-Channel Advanced Power MOSFET | |
5 | VSO100P10MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
6 | VSO004P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
7 | VSO005N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
8 | VSO006N04MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
9 | VSO006P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
10 | VSO007N04MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
11 | VSO007N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
12 | VSO007N07MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |