VSO100N10MD - Vanguard Semiconductor

VSO100N10MD Dual N-Channel Advanced Power MOSFET

VSO100N10MD 100V/3.7A Dual N-Channel Advanced Power MOSFET Features  Dual N-Channel，5V Logic Level Control  Enhancement mode  Fast Switching  High Effective  Pb-free lead plating; RoHS compliant; Halogen-Free V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 100 V 76 mΩ 81 mΩ 3.7 A SOP8 Part ID VSO100N10MD Package Type SOP8 Marking 100N10MD .

Features

 Dual N-Channel，5V Logic Level Control
 Enhancement mode
 Fast Switching
 High Effective
 Pb-free lead plating; RoHS compliant; Halogen-Free V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 100 V 76 mΩ 81 mΩ 3.7 A SOP8 Part ID VSO100N10MD Package Type SOP8 Marking 100N10MD Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Sou.