VSO100P06MD - Vanguard Semiconductor

VSO100P06MD Dual P-Channel Advanced Power MOSFET

VSO100P06MD -60V/-4.6A Dual P-Channel Advanced Power MOSFET Features  Dual P-Channel，-5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  High Effective  Pb-free lead plating; RoHS compliant; Hg-Free V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5 V ID -60 70 85 -4.6 V mΩ mΩ A SOP8 Part ID VS.

Features

 Dual P-Channel，-5V Logic Level Control
 Enhancement mode
 Very low on-resistance RDS(on) @ VGS=-4.5 V
 Fast Switching
 High Effective
 Pb-free lead plating; RoHS compliant; Hg-Free V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5 V ID -60 70 85 -4.6 V mΩ mΩ A SOP8 Part ID VSO100P06MD Package Type SOP8 Marking 100P06MD Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current teste.