Features N+P Channel Enhancement mode Very low on-resistance Fast Switching Pb-free lead plating; RoHS compliant VSO100M06MD 60V N+P Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=±10 V R @DS(on),TYP VGS=±4.5V ID 60 -60 V 70 75 mΩ 85 90 mΩ 4.5 -4.5 A SOP8 Part ID VSO100M06MD Package Type SOP8 Marking 100M06MD Tape and reel information.
N+P Channel
Enhancement mode
Very low on-resistance
Fast Switching
Pb-free lead plating; RoHS compliant
VSO100M06MD
60V N+P Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=±10 V R @DS(on),TYP VGS=±4.5V ID
60 -60 V 70 75 mΩ 85 90 mΩ 4.5 -4.5 A
SOP8
Part ID VSO100M06MD
Package Type SOP8
Marking 100M06MD
Tape and reel information
3000pcs/Reel
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VGS Gate-Source Voltage
V(BR)DSS
TJ TSTG IS
Drain-Source Breakdown Voltage
Maximum Junction Temperature① Storage Temperature Range Diode C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VSO100N10MD |
Vanguard Semiconductor |
Dual N-Channel Advanced Power MOSFET | |
2 | VSO100N10MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
3 | VSO100P06MD |
Vanguard Semiconductor |
Dual P-Channel Advanced Power MOSFET | |
4 | VSO100P10MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
5 | VSO140N15MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
6 | VSO004P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
7 | VSO005N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
8 | VSO006N04MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
9 | VSO006P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
10 | VSO007N04MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
11 | VSO007N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
12 | VSO007N07MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |