VSO013N10MS - Vanguard Semiconductor

VSO013N10MS N-Channel Advanced Power MOSFET

Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  High conversion efficiency  Pb-free lead plating; RoHS compliant VSO013N10MS 100V/12A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 100 V 11.0 mΩ 12.5 mΩ 12 A SOP8 Part ID VSO013N10MS Package Type SOP8 Marki.

Features

 N-Channel
 Enhancement mode
 Very low on-resistance RDS(on) @ VGS=4.5 V
 Fast Switching
 High conversion efficiency
 Pb-free lead plating; RoHS compliant VSO013N10MS 100V/12A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 100 V 11.0 mΩ 12.5 mΩ 12 A SOP8 Part ID VSO013N10MS Package Type SOP8 Marking 013N10M Tape and reel information 3000PCS/Reel Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM E.